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2SA817A
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA817A
Driver-Stage Amplifier Applications Voltage Amplifier Applications
Unit: mm
* *
Complementary to 2SC1627A. Driver stage application of 30 to 35 watts amplifiers.
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating -80 -80 -5 -400 400 800 150 -55 to 150 Unit V V V mA mA mW C C
JEDEC
TO-92MOD
JEITA Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-5J1A temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2SA817A
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 IC = -5 mA, IB = 0 VCE = -2 V, IC = -50 mA VCE = -2 V, IC = -200 mA IC = -200 mA, IB = -20 mA VCE = -2 V, IC = -5 mA VCE = -10 V, IC = -10 mA VCB = -10 V, IE = 0, f = 1 MHz Min -80 70 40 -0.55 Typ. 100 14 Max -100 -100 240 -0.4 -0.8 V V MHz pF Unit nA nA V
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
A817A
Part No. (or abbreviation code) Lot No.
Characteristics indicator
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SA817A
IC - VCE
-320 -3.5 -280 -3.0 -2.5 -240 -2.0 -200 -1.5 -160 -120 -80 -40 0 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -1.0 Common emitter Ta = 25C 500 1000
hFE - IC
Common emitter VCE = -2 V Ta = 100C 25 100 50 30 -25
DC current gain hFE
Collector current IC
(mA)
300
IB = -0.5 mA
10 -1
-3
-10
-30
-100
-300
Collector current IC VCE (V)
(mA)
Collector-emitter voltage
VCE (sat) - IC
-1 -300 Common emitter -0.5 -0.3 IC/IB = 10 -250
IC - VBE
Common emitter VCE = -2 V 25 -200 Ta = 100C -150 -25
Collector-emitter saturation voltage VCE (sat) (V)
-0.1 -0.05 -0.03
Ta = 100C -25 25
Collector current IC
-10 -30 -100 -300
(mA)
-100 -3 -50
-0.01 -1
Collector current IC
(mA)
0 0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
Base-emitter voltage
VBE (V)
Safe Operating Area
10 ms* 1 ms*
-1000 IC max (pulsed)* -500 IC max (continuous)
PC - Ta
(W) (mA)
1.6
-300 100 ms* -100 -50 -30 DC operation Ta = 25C
1.2
Collector power dissipation
0.8
Collector current IC
PC
-10 -5 -3 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. -1 -3 -10
0.4
0 0
40
80
120
160
200
-1 -0.5
VCEO max -30 -100
Ambient temperature Ta (C)
Collector emitter voltage
VCE (V)
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2SA817A
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-09

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